JICCE (한국정보통신학회)
Current Result Document :
| 한글제목(Korean Title) |
Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec |
| 영문제목(English Title) |
Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec |
| 저자(Author) |
Hak-kee Jung
Ji-hyeong Han
|
| 원문수록처(Citation) |
VOL 08 NO. 04 PP. 0449 ~ 0452 (2010. 08) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications. |
| 키워드(Keyword) |
design conditions
DGMOSFET
channel length
channel dimension
subthreshold characteristics
threshold voltage
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| 파일첨부 |
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